High frequency simulation of resonant tunneling diodes

Simulation of Resonant Tunneling Diodes Using ATLAS

This article describes a model for Resonant Tunneling Diodes (RTDs) implemented within ATLAS framework. The model is based on a self-consistent solution of Poisson and Non-Equilibrium Green’s Function (NEGF) equations with an effective mass Hamiltonian. Simulation results are presented for generic GaAs and SiGe RTDs.

High Frequency Simulation of Res onant Tunneling Diodes

The small and large-signal response of the resonant tunneling diode at high-frequencies is studied using a quantum simulator. The Poisson and Schriidinger equations are solved self-consistently for each harmonic using the harmonic balance technique. This ensures that the total current, consisting of the displacement plus conduction currents, is conserved across the device for each harmonic. The...

THz resonant-tunneling diodes

Applications of Resonant-Tunneling Diodes to High-Speed Digital ICs

Ultrahigh-speed circuit applications of resonant-tunneling diodes (RTDs) have been developed. The key points are the utilization of the edge-triggered and latching properties arising from negative differential resistance of the RTD, and the combination of RTDs and high electron mobility transistors (HEMTs). High-speed and low power operation of various flip-flop (FF) circuits monolithically int...

Ferromagnetic Resonant Tunneling Diodes: Physics and Applications

Dedication To my family. v Acknowledgements I would like to acknowledge, foremost, my advisor Prof. Sanjay Banerjee. I should thank him for providing me the opportunity to pursue graduate study, his constant support for the last six years – both intellectual and material, and the flexibility he afforded to me to define and follow my interests. Second, I would like to acknowledge my co-advisor P...